电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQJ184EP-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
2,838 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 118A (Tc) | 10V | 7.5mOhm @ 15A, 10V | 3.5V @ 250µA | 69 nC @ 10 V | ±20V | 3478 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
|
SIHA6N80AE-GE3MOSFET N-CH 800V 5A TO220 Vishay Siliconix |
816 | - |
|
数据手册 |
E | TO-220-3 Full Pack | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SQJ486EP-T1_GE3MOSFET N-CH 75V 30A PPAK SO-8 Vishay Siliconix |
2,499 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 30A (Tc) | 4.5V, 10V | 26mOhm @ 51A, 10V | 2.1V @ 250µA | 34 nC @ 10 V | ±20V | 1386 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SQJA94EP-T1_GE3MOSFET N-CH 80V 46A PPAK SO-8 Vishay Siliconix |
449 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 46A (Tc) | 10V | 13.5mOhm @ 10A, 10V | 3.5V @ 250µA | 35 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SI4116DY-T1-E3MOSFET N-CH 25V 18A 8SO Vishay Siliconix |
1,200 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 18A (Tc) | 2.5V, 10V | 8.6mOhm @ 10A, 10V | 1.4V @ 250µA | 56 nC @ 10 V | ±12V | 1925 pF @ 15 V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SQJ459EP-T2_GE3P-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix |
3,941 | - |
|
数据手册 |
- | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 52A (Tc) | 4.5V, 10V | 18mOhm @ 3.5A, 10V | 2.5V @ 250µA | 108 nC @ 10 V | ±20V | 4586 pF @ 30 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
IRFR024TRPBF-BE3MOSFET N-CH 60V 14A DPAK Vishay Siliconix |
2,550 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | - | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
|
IRFR420TRPBF-BE3MOSFET N-CH 500V 2.4A DPAK Vishay Siliconix |
2,150 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFZ24PBF-BE3MOSFET N-CH 60V 17A TO220AB Vishay Siliconix |
158 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | - | 100mOhm @ 10A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SISS30LDN-T1-GE3MOSFET N-CH 80V 16A/55.5A PPAK Vishay Siliconix |
10,781 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 55.5A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2070 pF @ 40 V | - | 4.8W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
