电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR818DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 Vishay Siliconix |
4,055 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.4V @ 250µA | 95 nC @ 10 V | ±20V | 3660 pF @ 15 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRL510PBF-BE3MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix |
332 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | - | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1 nC @ 5 V | ±10V | 250 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SISS70DN-T1-GE3MOSFET N-CH 125V 8.5A/31A PPAK Vishay Siliconix |
6,000 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 125 V | 8.5A (Ta), 31A (Tc) | 10V | 29.8mOhm @ 8.5A, 10V | 4.5V @ 250µA | 15.3 nC @ 10 V | ±20V | 535 pF @ 62.5 V | - | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SISS588DN-T1-GE3N-CHANNEL 80 V (D-S) MOSFET POWE Vishay Siliconix |
6,000 | - |
|
数据手册 |
TrenchFET® Gen V | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16.9A (Ta), 58.1A (Tc) | 7.5V, 10V | 8mOhm @ 10A, 10V | 4V @ 250µA | 28.5 nC @ 10 V | ±20V | 1380 pF @ 40 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SQJ858AEP-T1_BE3MOSFET N-CH 40V 58A PPAK SO-8 Vishay Siliconix |
2,993 | - |
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数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | - | 6.3mOhm @ 14A, 10V | 2.5V @ 250µA | 55 nC @ 10 V | ±20V | 2450 pF @ 20 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR4604DP-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
8,834 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15.1A (Ta), 49.3A (Tc) | 7.5V, 10V | 9.5mOhm @ 10A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 960 pF @ 30 V | - | 3.9W (Ta), 41.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFR110TRLPBF-BE3MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
2,985 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | - | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRFU014PBFMOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix |
2,611 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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SIJA52DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
200 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 15A, 10V | 2.4V @ 250µA | 150 nC @ 20 V | +20V, -16V | 7150 pF @ 20 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJA72EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix |
9,000 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 4.5V, 10V | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1390 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
