电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF510STRLPBFMOSFET N-CH 100V 5.6A D2PAK Vishay Siliconix |
250 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIRA36DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
2,924 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.2V @ 250µA | 56 nC @ 10 V | +20V, -16V | 2815 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQJ409EP-T1_BE3P-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix |
2,611 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 7mOhm @ 10A, 10V | 2.5V @ 250µA | 260 nC @ 10 V | ±20V | 11000 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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IRFU320PBFMOSFET N-CH 400V 3.1A TO251AA Vishay Siliconix |
2,342 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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SISS02DN-T1-GE3MOSFET N-CH 25V 51A/80A PPAK Vishay Siliconix |
2,988 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 51A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 83 nC @ 10 V | +16V, -12V | 4450 pF @ 10 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SQJ140EP-T1_GE3MOSFET N-CH 40V 266A PPAK SO-8 Vishay Siliconix |
2,945 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 266A (Tc) | 10V | 2.1mOhm @ 15A, 10V | 3.5V @ 250µA | 64 nC @ 10 V | ±20V | 3855 pF @ 25 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SIHP5N80AE-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
988 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 1.35Ohm @ 1.5A, 10V | 4V @ 250µA | 16.5 nC @ 10 V | ±30V | 321 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SQ4410EY-T1_BE3MOSFET N-CH 30V 15A 8SOIC Vishay Siliconix |
4,728 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 53 nC @ 10 V | ±20V | 2385 pF @ 25 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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IRFR9014TRLPBFMOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
2,555 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFU9010PBFMOSFET P-CH 50V 5.3A TO251AA Vishay Siliconix |
527 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
