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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SIRA20BDP-T1-GE3MOSFET N-CH 25V 82A/335A PPAK Vishay Siliconix |
8,287 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 82A (Ta), 335A (Tc) | - | 0.58mOhm @ 20A, 10V | 2.1V @ 250µA | 186 nC @ 10 V | +16V, -12V | 9950 pF @ 15 V | - | 6.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR574DP-T1-RE3N-CHANNEL 150 V (D-S) MOSFET POW Vishay Siliconix |
5,950 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 12.1A (Ta), 48.1A (Tc) | 7.5V, 10V | 13.5mOhm @ 10A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±20V | 2300 pF @ 75 V | - | 5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQ4470EY-T1_BE3MOSFET N-CH 60V 16A 8SOIC Vishay Siliconix |
2,445 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Tc) | 6V, 10V | 12mOhm @ 6A, 10V | 3.5V @ 250µA | 68 nC @ 10 V | ±20V | 3165 pF @ 25 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SQ4470EY-T1_GE3MOSFET N-CH 60V 16A 8SO Vishay Siliconix |
956 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Tc) | 6V, 10V | 12mOhm @ 6A, 10V | 3.5V @ 250µA | 68 nC @ 10 V | ±20V | 3165 pF @ 25 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SQ4153EY-T1_BE3MOSFET P-CHANNEL 12V 25A 8SOIC Vishay Siliconix |
435 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 25A (Tc) | 1.8V, 4.5V | 8.32mOhm @ 14A, 4.5V | 900mV @ 250µA | 151 nC @ 4.5 V | ±8V | 11000 pF @ 6 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SIR846BDP-T1-RE3MOSFET N-CH 100V 16.1A/65.8 PPAK Vishay Siliconix |
8,562 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16.1A (Ta), 65.8 (Tc) | 7.5V, 10V | 8mOhm @ 15A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±20V | 2440 pF @ 50 V | - | 5W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRF9Z14SPBFMOSFET P-CH 60V 6.7A D2PAK Vishay Siliconix |
638 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHP6N80AE-GE3MOSFET N-CH 800V 5A TO220AB Vishay Siliconix |
961 | - |
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数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | - | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SQD25N06-22L_GE3MOSFET N-CH 60V 25A TO252 Vishay Siliconix |
3,760 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 1975 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SIHB6N80AE-GE3E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix |
1,040 | - |
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数据手册 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
