| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQJ128ELP-T1_GE3AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix |
9,000 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 437A (Tc) | 4.5V, 10V | 1.15mOhm @ 15A, 10V | 2.2V @ 250µA | 150 nC @ 10 V | ±20V | 7315 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
IRFR420TRLPBFMOSFET N-CH 500V 2.4A DPAK Vishay Siliconix |
2,746 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SQD23N06-31L_GE3MOSFET N-CH 60V 23A TO252 Vishay Siliconix |
3,440 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | ±20V | 845 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SQJ848EP-T1_GE3MOSFET N-CH 40V 47A PPAK SO-8 Vishay Siliconix |
2,644 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 47A (Tc) | 4.5V, 10V | 7.5mOhm @ 10.3A, 10V | 2.5V @ 250µA | 23 nC @ 10 V | ±20V | 2500 pF @ 20 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SIRC04DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
4,931 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.45mOhm @ 15A, 10V | 2.1V @ 250µA | 56 nC @ 10 V | +20V, -16V | 2850 pF @ 15 V | Schottky Diode (Body) | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SI7456CDP-T1-GE3MOSFET N-CH 100V 27.5A PPAK SO-8 Vishay Siliconix |
2,482 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27.5A (Tc) | 4.5V, 10V | 23.5mOhm @ 10A, 10V | 2.8V @ 250µA | 23 nC @ 10 V | ±20V | 730 pF @ 50 V | - | 5W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF9610PBF-BE3MOSFET P-CH 200V 1.8A TO220AB Vishay Siliconix |
996 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 1.8A (Tc) | - | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFR024TRLPBFMOSFET N-CH 60V 14A DPAK Vishay Siliconix |
5,000 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
IRF630STRRPBFMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
557 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF610STRLPBFMOSFET N-CH 200V 3.3A D2PAK Vishay Siliconix |
677 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

