| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIRA62DP-T1-RE3MOSFET N-CH 30V 51.4A/80A PPAK Vishay Siliconix |
5,948 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 51.4A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 93 nC @ 10 V | +16V, -12V | 4460 pF @ 15 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR5710DP-T1-RE3N-CHANNEL 150 V (D-S) MOSFET POW Vishay Siliconix |
6,000 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 7.8A (Ta), 26.8A (Tc) | 7.5V, 10V | 31.5mOhm @ 10A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 770 pF @ 75 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQ4435EY-T1_BE3MOSFET P-CHANNEL 30V 15A 8SOIC Vishay Siliconix |
2,494 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 58 nC @ 10 V | ±20V | 2170 pF @ 15 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
|
SQ4435EY-T1_GE3MOSFET P-CHANNEL 30V 15A 8SOIC Vishay Siliconix |
2,260 | - |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 58 nC @ 10 V | ±20V | 2170 pF @ 15 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SIR164DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 Vishay Siliconix |
4,515 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.5mOhm @ 15A, 10V | 2.5V @ 250µA | 123 nC @ 10 V | ±20V | 3950 pF @ 15 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQJA02EP-T1_GE3MOSFET N-CH 60V 60A PPAK SO-8 Vishay Siliconix |
2,916 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 4.8mOhm @ 10A, 10V | 3.5V @ 250µA | 80 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SQJA76EP-T1_GE3MOSFET N-CH 40V 75A PPAK SO-8 Vishay Siliconix |
2,550 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2.4mOhm @ 10A, 10V | 3.5V @ 250µA | 100 nC @ 10 V | ±20V | 5250 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
IRFR010PBFMOSFET N-CH 50V 8.2A DPAK Vishay Siliconix |
2,278 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 8.2A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
IRF9620PBF-BE3MOSFET P-CH 200V 3.5A TO220AB Vishay Siliconix |
766 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | - | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF510STRRPBFMOSFET N-CH 100V 5.6A TO263 Vishay Siliconix |
1,497 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

