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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQS840EN-T1_GE3MOSFET N-CH 40V 12A PPAK1212-8 Vishay Siliconix |
1,763 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 7.5A, 10V | 2.5V @ 250µA | 22.5 nC @ 10 V | ±20V | 1031 pF @ 20 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 1212-8 |
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SIRC10DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
5,967 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.4V @ 250µA | 36 nC @ 10 V | +20V, -16V | 1873 pF @ 15 V | Schottky Diode (Body) | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFL210TRPBF-BE3MOSFET N-CH 200V 960MA SOT223 Vishay Siliconix |
2,263 | - |
|
数据手册 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 960mA (Tc) | - | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRFR120PBF-BE3MOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
5,925 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | - | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SQS482EN-T1_BE3N-CHANNEL 30-V (D-S) 175C MOSFET Vishay Siliconix |
6,000 | - |
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数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39 nC @ 10 V | ±20V | 1865 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIA413ADJ-T1-GE3MOSFET P-CH 12V 12A PPAK SC70-6 Vishay Siliconix |
2,900 | - |
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数据手册 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 12A (Tc) | 1.5V, 4.5V | 29mOhm @ 6.7A, 4.5V | 1V @ 250µA | 57 nC @ 8 V | ±8V | 1800 pF @ 10 V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 Single |
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SISH129DN-T1-GE3MOSFET P-CH 30V 14.4A/35A PPAK Vishay Siliconix |
5,740 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 14.4A (Ta), 35A (Tc) | 4.5V, 10V | 11.4mOhm @ 14.4A, 10V | 2.8V @ 250µA | 71 nC @ 10 V | ±20V | 3345 pF @ 15 V | - | 3.8W (Ta), 52.1W (Tc) | -50°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
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SQJ152EP-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
3,000 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 114A (Tc) | 10V | 5.1mOhm @ 15A, 10V | 3.5V @ 250µA | 27 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SISHA04DN-T1-GE3MOSFET N-CH 30V 30.9A/40A PPAK Vishay Siliconix |
5,801 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30.9A (Ta), 40A (Tc) | 4.5V, 10V | 2.15mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | +20V, -16V | 3595 pF @ 15 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
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SQJA86EP-T1_BE3N-CHANNEL 80-V (D-S) 175C MOSFET Vishay Siliconix |
5,297 | - |
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数据手册 |
- | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 19mOhm @ 8A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
