电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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18N20JMOSFET N-CH 200V 18A TO-251 Goford Semiconductor |
1,000 | - |
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数据手册 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 18A (Tc) | 10V | 160mOhm @ 9A, 10V | 3V @ 250µA | - | ±30V | - | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
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GT130N10FMOSFET N-CH 100V 45A 41.7W 12m( Goford Semiconductor |
1,000 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1215 pF @ 50 V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT180N12MMOSFET N-CH 120V 55A 96W 17m(max Goford Semiconductor |
800 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 17mOhm @ 20A, 10V | 4.5V @ 250µA | 22 nC @ 10 V | ±20V | 1635 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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18N20FMOSFET N-CH 200V 18A TO-220F Goford Semiconductor |
1,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 3V @ 250µA | - | ±20V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G75P04TMOSFET P-CH 40V 70A TO-220 Goford Semiconductor |
1,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G75P04FMOSFET P-CH 40V 54A TO-220F Goford Semiconductor |
1,000 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ -10A, -10V | 2.5V @ 250µA | 106 nC @ -10 V | ±20V | 6768 pF @ -20 V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT065P06MMOSFET P-CH 60V 103A 178W 9m(max Goford Semiconductor |
800 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 103A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 5985 pF @ 30 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G030N06TMOSFET N-CH 60V 223A TO-220 Goford Semiconductor |
1,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 223A (Tc) | 4.5V, 10V | 2.7mOhm @ 30A, 10V | 2.5V @ 250µA | 101 nC @ 4.5 V | ±20V | 11999 pF @ 30 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G080N10TMOSFET N-CH 100V 140A 236W TO-2 Goford Semiconductor |
1,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.5V @ 250µA | 192 nC @ 10 V | ±20V | 13912 pF @ 50 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT035N06TMOSFET N-CH 60V 170A TO-220 Goford Semiconductor |
1,000 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 170A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
