电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G60N10TN100V,RD(MAX)<25M@10V,RD(MAX)<30 Goford Semiconductor |
3,952 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 146 nC @ 10 V | ±20V | 5986 pF @ 50 V | - | 132W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G75P04FMOSFET P-CH 40V 54A TO-220F Goford Semiconductor |
100 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 10A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6768 pF @ 20 V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G110N06TN60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor |
2,961 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | 2.5V @ 250µA | 122 nC @ 10 V | ±20V | 6512 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT080N10TN100V, 70A,RD<8M@10V,VTH1.0V~3.0 Goford Semiconductor |
4,729 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | 2.5V @ 250µA | 43 nC @ 10 V | ±20V | 2530 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G900P15TP-150V,-60A,RD(MAX)<80M@-10V,VTH Goford Semiconductor |
3,542 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 10V | 80mOhm @ 5A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 3932 pF @ 75 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT180P08TMOSFET P-CH 80V 89A TO-220 Goford Semiconductor |
3,387 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 89A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 6040 pF @ 40 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GC11N65TN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
2,587 | - |
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数据手册 |
SuperJunction | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT400P10TMOSFET P-CH 100V 35A TO-220 Goford Semiconductor |
3,387 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3223 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT250P10TMOSFET P-CH 100V 56A TO-220 Goford Semiconductor |
3,512 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 30mOhm @ 10A, 10V | 4V @ 250µA | 73 nC @ 10 V | ±20V | 4059 pF @ 50 V | - | 173.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT060N10TMOSFET N-CH 100V 116A TO-220 Goford Semiconductor |
100 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 116A (Tc) | 10V | 6mOhm @ 30A, 10V | 4V @ 250µA | 83 nC @ 10 V | ±20V | 5365 pF @ 50 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
