上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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18N20FN200V, 18A,RD<0.19@10V,VTH1.0V~3 Goford Semiconductor |
4,409 | - |
|
数据手册 |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 3V @ 250µA | 18 nC @ 10 V | ±20V | 852 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G050P03TP-30V,-85A,RD(MAX)<5M@-10V,VTH-1 Goford Semiconductor |
3,434 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 85A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | ±20V | 6922 pF @ 15 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT105N10FN100V,RD(MAX)<10.5M@10V,RD(MAX)< Goford Semiconductor |
3,324 | - |
|
数据手册 |
SGT | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 4.5V, 10V | 10.5mOhm @ 11A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1587 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT150N12TMOSFET N-CH 120V 55A TO-220 Goford Semiconductor |
2,027 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 25 nC @ 10 V | ±20V | 1650 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G18N20TMOSFET N-CH 200V 18A 110W 190M(M Goford Semiconductor |
4,690 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 31 nC @ 5 V | ±30V | 1120 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G020N03TMOSFET N-CH 30V 140A TO-220 Goford Semiconductor |
4,427 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2V @ 250µA | 110 nC @ 10 V | ±20V | 6005 pF @ 15 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G048N04TMOSFET N-CH 40V 150A TO-220 Goford Semiconductor |
2,542 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 10V | 3.3Ohm @ 50A, 10V | 2.5V @ 250µA | 117 nC @ 10 V | ±20V | 6561 pF @ 20 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G075N06MMOSFET N-CH 60V 110A 160W TO-263 Goford Semiconductor |
800 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 7mOhm @ 20A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 6443 pF @ 30 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT013N04TIMOSFET N-CH 40V 220A TO-220 Goford Semiconductor |
3,578 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 220A (Tc) | 10V | 2.5mOhm @ 30A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±20V | 3986 pF @ 20 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G070N06THMOSFET N-CH 60V 110A 160W 6.4M( Goford Semiconductor |
2,820 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 6.4mOhm @ 20A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±20V | 6512 pF @ 30 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
