电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC20N65TMOSFET N-CH 650V 20A TO-220 Goford Semiconductor |
4,000 | - |
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数据手册 |
Cool MOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | - | ±30V | - | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT023N10TMOSFET N-CH 100V 226A 250W 2.7m( Goford Semiconductor |
5,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 2.7mOhm @ 20A, 10V | 4.3V @ 250µA | 90 nC @ 10 V | ±20V | 8086 pF @ 50 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GC20N65FMOSFET N-CH 650V 20A TO-220F Goford Semiconductor |
20,000 | - |
|
数据手册 |
Cool MOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 4V @ 250µA | - | ±30V | - | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT023N10MMOSFET N-CH 100V 226A TO-263 Goford Semiconductor |
1,600 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 226A (Tc) | 10V | 2.7mOhm @ 20A, 10V | 4.3V @ 250µA | 121 nC @ 10 V | ±20V | 8050 pF @ 50 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT070N15TMOSFET N-CH 150V 140A 320W 5.8m( Goford Semiconductor |
4,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 140A (Tc) | 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 5864 pF @ 75 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT023N10TLMOSFET N-CH 100V 330A TOLL-8 Goford Semiconductor |
4,000 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 330A (Tc) | 10V | 1.9mOhm @ 80A, 10V | 3.8V @ 250µA | 121 nC @ 10 V | ±20V | 8058 pF @ 50 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL |
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GT070N15MMOSFET N-CH 150V 140A 320W 5.8m( Goford Semiconductor |
800 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 140A (Tc) | 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 5850 pF @ 75 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT023N10QMOSFET N-CH 100V 226A 250W TO-2 Goford Semiconductor |
1,200 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 226A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 121 nC @ 10 V | ±20V | 8488 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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GT016N10TLMOSFET N-CH 100V 362A TOLL-8 Goford Semiconductor |
2,000 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 362A (Tc) | 10V | 1.6mOhm @ 15A, 10V | 4.5V @ 250µA | 165 nC @ 10 V | ±20V | 10037 pF @ 50 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL |
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GC20N65QDMOSFET N-CH 650V 20A 151W 170m(m Goford Semiconductor |
6,000 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 39 nC @ 10 V | ±30V | 1729 pF @ 400 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
