上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC20N65QMOSFET N-CH 650V 20A TO-247 Goford Semiconductor |
15,000 | - |
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数据手册 |
Cool MOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | - | ±30V | - | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC041N65QFMOSFET N-CH 650V 70A TO-247 Goford Semiconductor |
3,000 | - |
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数据手册 |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GS65R030Q4ASiC MOSFET N-CH 650V 70A TO-247 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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GS65R045Q4ASiC MOSFET N-CH 650V 51A TO-247 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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GS120R033Q4ASiC MOSFET N-CH 1200V 69A TO-24 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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GS120R040Q4SiC MOSFET N-CH 1200V 50A TO-24 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-247-4 | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4L |
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G60KN30IMOSFET N-CH 300V 0.3A SOT-23 Goford Semiconductor |
550 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 300mA (Tc) | 10V | 5.4Ohm @ 300mA, 10V | 1.8V @ 250µA | 2.5 nC @ 10 V | ±30V | 68 pF @ 150 V | - | 710mW (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G2K3N10GN100V, 2.5A,RD<220M@10V,VTH1V~2V Goford Semiconductor |
1,126 | - |
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数据手册 |
TrenchFET® | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.5A (Tc) | 4.5V, 10V | 220mOhm @ 2A, 10V | 2V @ 250µA | 13 nC @ 10 V | ±20V | 436 pF @ 50 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-89 |
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G3404LLN30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor |
972 | - |
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数据手册 |
TrenchFET® | SOT-23-6 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Tc) | 4.5V, 10V | 22mOhm @ 4.2A, 10V | 2V @ 250µA | 12.2 nC @ 10 V | ±20V | 541 pF @ 15 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L |
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G1003BN100V,RD(MAX)<170M@10V,RD(MAX)<1 Goford Semiconductor |
934 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 4.5V, 10V | 130mOhm @ 1A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 760 pF @ 50 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3L |
