上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT085N10THMOSFET N-CH 100V 70A 100W 8.5m( Goford Semiconductor |
2,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 8.5mOhm @ 20A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 2940 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G65P06TMOSFET P-CH 60V 65A TO-220 Goford Semiconductor |
10,000 | - |
|
数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | - | ±20V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT080N10KMOSFET N-CH 100V 65A TO-252 Goford Semiconductor |
10,000 | - |
|
数据手册 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 65A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | 3V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT52N10TMOSFET N-CH 100V 70A TO-220 Goford Semiconductor |
10,000 | - |
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数据手册 |
SGT | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 3V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT1K2P15KMOSFET P-CH 150V 27A 138W 110m(m Goford Semiconductor |
5,000 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 4.5V, 10V | 110mOhm @ 15A, 10V | 3V @ 250µA | 86 nC @ 10 V | ±20V | 3275 pF @ 75 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT400P10KMOSFET P-CH 100V 35A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3128 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G65P06KMOSFET P-CH 60V 65A TO-252 Goford Semiconductor |
30,000 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | - | ±20V | - | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G900P15KMOSFET P-CH 150V 50A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 50A (Tc) | 10V | 80mOhm @ 5A, 10V | 4V @ 250µA | - | ±20V | - | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT080N10TMOSFET N-CH 100V 70A TO-220 Goford Semiconductor |
2,000 | - |
|
数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | 3V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT400P10TMOSFET P-CH 100V 35A TO-220 Goford Semiconductor |
2,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3223 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
