电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G070N06THMOSFET N-CH 60V 110A 160W 6.4m( Goford Semiconductor |
5,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 6.4mOhm @ 20A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±20V | 6512 pF @ 30 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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18N20MOSFET N-CH 200V 18A TO-252 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 3V @ 250µA | - | ±30V | - | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G050P03KMOSFET P-CH 30V 85A TO-252 Goford Semiconductor |
10,000 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 85A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | ±20V | 7533 pF @ -15 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G60N10KMOSFET N-CH 100V 60A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 4.5V, 10V | 25mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G110N06KMOSFET N-CH 60V 110A TO-252 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 4A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G230P06TMOSFET P-CH 60V 60A TO-220 Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 10V | 20mOhm @ 10A, 10V | 4V @ 250µA | - | ±20V | - | - | 115W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G100N03D5MOSFET N-CH 30V 100A DFN5*6-8L Goford Semiconductor |
10,000 | - |
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数据手册 |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G230P06FMOSFET P-CH 60V 42A TO-220F Goford Semiconductor |
3,000 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Tc) | 4.5V, 10V | 23mOhm @ -10A,- 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4669 pF @ -30 V | - | 67.57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G75P04KMOSFET P-CH 40V 70A TO-252 Goford Semiconductor |
15,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 10V | 10mOhm @ 10A, 20V | 2.5V @ 250µA | - | ±20V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT105N10FMOSFET N-CH 100V 33A TO-220F Goford Semiconductor |
60,000 | - |
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数据手册 |
SGT | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 33A (Tc) | 4.5V, 10V | 10.5mOhm @ 11A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 20.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
