电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT150N12TMOSFET N-CH 120V 55A TO-220 Goford Semiconductor |
4,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 22 nC @ 10 V | ±20V | 1596 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT105N10TMOSFET N-CH 100V 55A TO-220 Goford Semiconductor |
10,000 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G020N03TMOSFET N-CH 30V 140A TO-220 Goford Semiconductor |
2,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2V @ 250µA | 110 nC @ 10 V | ±20V | 6005 pF @ 15 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT013N04D5MOSFET N-CH 40V 195A 96W 1.7m(ma Goford Semiconductor |
5,000 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.7mOhm @ 30A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3927 pF @ 20 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT750P10MMOSFET P-CH 100V 24A TO-263 Goford Semiconductor |
3,200 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 4.5V, 10V | 65mOhm @ 20A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1902 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G60N10TMOSFET N-CH 100V 60A TO-220 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 132W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G050P03TMOSFET P-CH 30V 85A TO-220 Goford Semiconductor |
2,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 85A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT52N10D5MOSFET N-CH 100V 71A DFN5*6-8L Goford Semiconductor |
20,000 | - |
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数据手册 |
SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 71A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G75P04MMOSFET P-CH 40V 80ATO-263 Goford Semiconductor |
1,600 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ -30A, -10V | 2.5V @ 250µA | 106 nC @ -10 V | ±20V | 6516 pF @ -20 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G170P06MMOSFET P-CH 60V 65A TO-263 Goford Semiconductor |
4,000 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 17mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 6451 pF @ 30 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
