电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G60N06TMOSFET N-CH 60V 50A TO-220 Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 50A (Tc) | 4.5V, 10V | 17mOhm @ 5A, 10V | 2V @ 250µA | - | ±20V | - | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G70N04TMOSFET N-CH 40V 70A TO-220 Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.4V @ 250µA | - | ±20V | - | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT019N04D5MOSFET N-CH 40V 120A DFN5*6-8L Goford Semiconductor |
50,000 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2.8mOhm @ 10A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | ±20V | 2840 pF @ 20 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G2K8P15KMOSFET P-CH 150V 12A TO-252 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 12A (Tc) | 10V | 310mOhm @ 1A, 10V | 3.5V @ 250µA | - | ±20V | - | - | 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT650N15KMOSFET N-CH 150V 20A TO-252 Goford Semiconductor |
7,500 | - |
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数据手册 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 20A (Tc) | 10V | 65mOhm @ 10A, 10V | 4.5V @ 250µA | - | ±20V | - | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 |
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GT060N04TMOSFET N-CH 40 60A TO-220 Goford Semiconductor |
5,000 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.3V @ 250µA | - | ±20V | - | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT095N10SMOSFET N-CH 100V 11A SOP-8 Goford Semiconductor |
20,000 | - |
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数据手册 |
SGT | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G86N06KMOSFET N-CH 60V 80A TO-252 Goford Semiconductor |
10,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 80A (Tc) | 10V | 8mOhm @ 4A, 10V | 4V @ 250µA | - | ±20V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G300P06TMOSFET P-CH 60V 40A TO-220 Goford Semiconductor |
4,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 40A (Tc) | 10V | 30mOhm @ 12A, 10V | 3V @ 250µA | - | ±20V | - | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT090N06MHMOSFET N-CH 60V 45A 52W 11m(max Goford Semiconductor |
4,000 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 11mOhm @ 15A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
