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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G30N02TMOSFET N-CH 20V 30A TO-220 Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 30A (Tc) | 4.5V | 13mOhm @ 20A, 4.5V | 1.2V @ 250µA | - | ±12V | - | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT700P08D3MOSFET P-CH 80V 16A 69W 75m(max) Goford Semiconductor |
5,000 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Tc) | 10V | 75mOhm @ 2A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 1591 pF @ 40 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G130N06SMOSFET N-CH 60V 9A SOP-8 Goford Semiconductor |
8,000 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 9A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 2.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G050N03SMOSFET N-CH 30V 18A SOP-8 Goford Semiconductor |
8,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 18A (Tc) | 4.5V, 10V | 5mOhm @ 10A, 10V | 2.4V @ 250µA | - | ±20V | - | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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GT060N04KMOSFET N-CH 40V 62A 70W TO-252 Goford Semiconductor |
5,000 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 54A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.3V @ 250µA | 19 nC @ 10 V | ±20V | 1279 pF @ 20 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT110N06SMOSFET N-CH 60V 14A SOP-8 Goford Semiconductor |
4,000 | - |
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数据手册 |
SGT | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 14A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | 2.4V @ 250µA | - | ±20V | - | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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GT110N06D3MOSFET N-CH 60V 35A DFN3*3-8L Goford Semiconductor |
20,000 | - |
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数据手册 |
SGT | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 35A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | 2.4V @ 250µA | - | ±20V | - | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G700P06TMOSFET P-CH 60V 25A TO-220 Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 25A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G58N06KMOSFET N-CH 60V 58A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 58A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 71W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
25P06MOSFET P-CH 60V 25A TO-252 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 25A (Tc) | 10V | 32mOhm @ 12A, 10V | 3V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
