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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G16N03SMOSFET N-CH 30V 16A SOP-8 Goford Semiconductor |
8,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 16A (Tc) | 5V, 10V | 10mOhm @ 10A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G700P06JMOSFET P-CH 60V 23A TO-251 Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 23A (Tc) | 4.5V, 10V | 70mOhm @ 6A, 10V | 3V @ 250µA | - | ±20V | - | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
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4435MOSFET P-CH 30V 11A SOP-8 Goford Semiconductor |
40,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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GT10N10MOSFET N-CH 100V 7A TO-252 Goford Semiconductor |
50,000 | - |
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数据手册 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 7A (Tc) | 4.5V, 10V | 140mOhm @ 3.5A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 17W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G12P04KMOSFET P-CH 40V 12A TO-252 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 12A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G160N04KMOSFET N-CH 40V 25A TO-252 Goford Semiconductor |
7,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 25A (Tc) | 4.5V, 10V | 15mOhm @ 8A, 10V | 2V @ 250µA | - | ±20V | - | - | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G36N03KMOSFET N-CH 30V 36A TO-252 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 36A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | 2.2V @ 250µA | - | ±20V | - | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G04P10HEMOSFET P-CH ESD 100V 4A SOT-223 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 4A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | 2.8V @ 250µA | - | ±20V | - | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G15N10CMOSFET N-CH 100V 22A TO-252 Goford Semiconductor |
50,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 22A (Tc) | 4.5V, 10V | 90mOhm @ 8A, 10V | 3V @ 250µA | - | ±20V | - | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G090P02SMOSFET P-CH 20V 11A SOP-8 Goford Semiconductor |
8,000 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 2.5V, 4.5V | 9mOhm @ 1A, 4.5V | 1.1V @ 250µA | 47 nC @ 10 V | ±20V | 2225 pF @ 10 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
