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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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60N06MOSFET N-CH 60V 50A TO-252 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 50A (Tc) | 4.5V, 10V | 17mOhm @ 5A, 10V | 2V @ 250µA | - | ±20V | - | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G80N03KMOSFET N-CH 30V 80A TO-252 Goford Semiconductor |
10,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 25A, 10V | 2V @ 250µA | - | ±20V | - | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G40P03KMOSFET P-CH 30V 40A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 40A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G60N04KMOSFET N-CH 40V 60A TO-252 Goford Semiconductor |
90,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 65W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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5N20AMOSFET N-CH 200V 5A TO-252 Goford Semiconductor |
100,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 5A (Tc) | 10V | 580mOhm @ 2.5A, 10V | 3V @ 250µA | - | ±20V | - | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G33N03D52MOSFET N+N-CH 30V 33A DFN5*6-8L Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 33A (Tc) | 4.5V, 10V | 13mOhm @ 16A, 10V | 3V @ 250µA | - | ±20V | - | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G40P03D5MOSFET P-CH 30V 35A DFN5*6-8L Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 35A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G140P04KMOSFET P-CH 40V 45A 60W TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2261 pF @ 20 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G13P04SMOSFET P-CH 40V 13A SOP-8 Goford Semiconductor |
8,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 13A (Tc) | 10V | 15mOhm @ 12A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G18P03SMOSFET P-CH 30V 15A SOP-8 Goford Semiconductor |
4,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 15A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
