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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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G2014MOSFET N-CH 20V 14A DFN2*2-6L Goford Semiconductor |
6,000 | - |
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数据手册 |
TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 14A (Tc) | 2.5V, 10V | 7mOhm @ 5A, 10V | 900mV @ 250µA | - | ±12V | - | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
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G12P03D3MOSFET P-CH 30V 12A DFN3*3-8L Goford Semiconductor |
100,000 | - |
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数据手册 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 12A (Tc) | 4.5V, 10V | 20mOhm @ 6A, 10V | 2V @ 250µA | - | ±20V | - | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G10N03SMOSFET N-CH 30V 10A SOP-8 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 10A (Tc) | 4.5V, 10V | 12mOhm @ 6A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G28N03D3MOSFET N-CH 30V 28A DFN3*3-8L Goford Semiconductor |
10,000 | - |
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数据手册 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 28A (Tc) | 4.5V, 10V | 12mOhm @ 16A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G33N03SMOSFET N-CH 30V 13A SOP-8 Goford Semiconductor |
8,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 13A (Tc) | 4.5V, 10V | 12mOhm @ 8A, 10V | 1.1V @ 250µA | - | ±20V | - | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G7P03SMOSFET P-CH 30V 9A SOP-8 Goford Semiconductor |
40,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 9A (Tc) | 4.5V, 10V | 22mOhm @ 3A, 10V | 2V @ 250µA | - | ±20V | - | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G11SMOSFET P-CH 20V 11A SOP-8 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 2.5V, 4.5V | 18.4mOhm @ 1A, 4.5V | 1.1V @ 250µA | - | ±12V | - | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G1K3N10GMOSFET N-CH 100V 5A TO-89 Goford Semiconductor |
16,000 | - |
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数据手册 |
TrenchFET® | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 5A (Tc) | 4.5V, 10V | 130mOhm @ 5A, 10V | 2V @ 250µA | - | ±20V | - | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-89 |
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G10P03MOSFET P-CH 30V 10A DFN3*3-8L Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 10A (Tc) | 2.5V, 4.5V | 26mOhm @ 10A, 4.5V | 1.5V @ 250µA | - | ±12V | - | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G700P06D3MOSFET P-CH 60V 18A 32W 70m(max) Goford Semiconductor |
5,000 | - |
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数据手册 |
G | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 70mOhm @ 4A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1446 pF @ 30 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
