| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT042P06TMOSFET, P-CH,-60V,-160A,RD(MAX)< Goford Semiconductor |
3,908 | - |
|
数据手册 |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 160A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.5V @ 250µA | 305 nC @ 10 V | ±20V | 9151 pF @ 30 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
GT040N10TMOSFET N-CH 100V 140A 200W 4.5M Goford Semiconductor |
1,834 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 5920 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
GC20N65FN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
3,560 | - |
|
数据手册 |
SuperJunction | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1603 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
|
GC20N65TN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
2,382 | - |
|
数据手册 |
SuperJunction | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
GT023N10TN100V, 140A,RD<2.7M@10V,VTH2.7V~ Goford Semiconductor |
1,641 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 2.7mOhm @ 20A, 10V | 4.3V @ 250µA | 90 nC @ 10 V | ±20V | 8086 pF @ 50 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
GT038P06MMOSFET P-CH 60V 200A 350W TO-26 Goford Semiconductor |
3,196 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 200A (Tc) | 4.5V, 10V | 4.5mOhm @ 50A, 10V | 2.5V @ 250µA | 386 nC @ 10 V | ±20V | 11988 pF @ 30 V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
GC20N65FDMOSFET N-CH 650V 20A 40W TO-220 Goford Semiconductor |
2,065 | - |
|
数据手册 |
SuperJunction | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 39 nC @ 10 V | ±30V | 1729 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
|
GT035N10MN100V, 190A,RD<3.5M@10V,VTH2V~4V Goford Semiconductor |
3,651 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6188 pF @ 50 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
GT035N10QMOSFET N-CH 100V 190A TO-247 Goford Semiconductor |
1,672 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 30A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6516 pF @ 50 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
GT070N15TMOSFET N-CH 150V140A 320W TO-22 Goford Semiconductor |
4,630 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 140A (Tc) | 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 5864 pF @ 75 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |

