上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT040N10TMOSFET N-CH 100V 140A 200W 4.5m Goford Semiconductor |
1,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 5920 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT045N10MMOSFET N-CH 100V 120A TO-263 Goford Semiconductor |
800 | - |
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数据手册 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 120A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 250µA | - | ±20V | - | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GC11N65MMOSFET N-CH 650V 11A TO-263 Goford Semiconductor |
800 | - |
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数据手册 |
Cool MOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | - | ±30V | - | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G08N02LN20V, 8A, RD<12.3M@4.5V,VTH0.5V~ Goford Semiconductor |
8,946 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 2.5V, 4.5V | 12.3mOhm @ 12A, 4.5V | 900mV @ 250µA | 22 nC @ 10 V | ±12V | 929 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 | |
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G06N02HN20V, 6A, RD<14.3M@4.5V,VTH0.5V~ Goford Semiconductor |
2,096 | - |
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数据手册 |
- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 14.3mOhm @ 3A, 4.5V | 900mV @ 250µA | 12.5 nC @ 10 V | ±12V | 1140 pF @ 10 V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 | |
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G08N03D2N30V,8A,RD<20M@10V,VTH1.0V~2.0V, Goford Semiconductor |
8,365 | - |
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数据手册 |
- | 6-WDFN Exposed Pad | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 4A, 10V | 2V @ 250µA | 15 nC @ 10 V | ±20V | 681 pF @ 15 V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) | |
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2002AN190V,5A,RD<540M@10V,VTH1.0V~3.0 Goford Semiconductor |
7,467 | - |
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数据手册 |
- | SOT-23-6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 190 V | 5A (Tc) | 4.5V, 10V | 540mOhm @ 1A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 733 pF @ 100 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L | |
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G7P03D2P-30V,-7A,RD(MAX)<20.5M@-10V,VTH Goford Semiconductor |
9,882 | - |
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数据手册 |
- | 6-WDFN Exposed Pad | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Tc) | 4.5V, 10V | 20.5mOhm @ 1A, 10V | 1.1V @ 250µA | 19 nC @ 4.5 V | ±20V | 1900 pF @ 15 V | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) | |
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G08N02HN20V, 12A, RD<11.3M@4.5V,VTH0.5V Goford Semiconductor |
6,927 | - |
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数据手册 |
- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 2.5V, 4.5V | 11.3mOhm @ 1A, 4.5V | 900mV @ 250µA | 12.5 nC @ 4.5 V | ±12V | 1255 pF @ 10 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 | |
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GT100N04KN40V,50A,RD<10M@10V,VTH1.2V~2.2V Goford Semiconductor |
2,566 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 10mOhm @ 5A, 10V | 2.2V @ 250µA | 32 nC @ 10 V | ±20V | 644 pF @ 20 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
