上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G75P04FIP-40V,-60A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor |
5,418 | - |
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数据手册 |
TrenchFET® | TO-220-3 Full Pack | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 7mOhm @ 10A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6275 pF @ 20 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F | |
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GT080N10TIN100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor |
9,621 | - |
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数据手册 |
- | TO-220-3 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2328 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 | |
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G12P10TEP-100V,-12A,RD(MAX)<200M@-10V,VT Goford Semiconductor |
1,789 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 200mOhm @ 6A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G18P03D3P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Goford Semiconductor |
5,075 | - |
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数据手册 |
TrenchFET® | 8-PowerVDFN | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | ±20V | 3074 pF @ 15 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) | |
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GT040N04TIN40V, 110A,RD<4M@10V,VTH1.0V~2.5 Goford Semiconductor |
1,519 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 4mOhm @ 10A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2303 pF @ 20 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT088N06TN60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Goford Semiconductor |
9,693 | - |
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数据手册 |
SGT | TO-220-3 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.4V @ 250µA | 21 nC @ 10 V | ±20V | 1116 pF @ 30 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 | |
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G75P04TMOSFET, P-CH,-40V,-70A,RD(MAX)<7 Goford Semiconductor |
2,978 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6985 pF @ 20 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT040N04TMOSFET N-CH 40V 120A 96W 4M(MAX) Goford Semiconductor |
5,167 | - |
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数据手册 |
SGT | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V, 4.5V | 4mOhm @ 30A, 10V | 2.3V @ 250µA | 38 nC @ 10 V | 20V | 2794 pF @ 20 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - | |
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G6N90FMOSFET N-CH 900V 6A 69W 3(MAX) T Goford Semiconductor |
7,125 | - |
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数据手册 |
Trench | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6A (Tc) | 10V | 3Ohm @ 3A, 10V | 5V @ 250µA | 25 nC @ 10 V | 20V | 1060 pF @ 450 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - | |
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GT2K0P20TMOSFET P-CH 200V 19A 138W 200M(M Goford Semiconductor |
8,639 | - |
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数据手册 |
SGT | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V, 4.5V | 200mOhm @ 15A, 10V | 3V @ 250µA | 70 nC @ 10 V | 20V | 3400 pF @ 100 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
