上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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20N06N60V,25A,RD<24M@10V,VTH1.0V~2.5V Goford Semiconductor |
8,215 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 4.5V, 10V | 24mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1609 pF @ 30 V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 | |
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GT040N04D5IN40V,110A,RD<3.5M@10V,VTH1.0V~2. Goford Semiconductor |
2,055 | - |
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数据手册 |
- | 8-PowerTDFN | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2298 pF @ 20 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) | |
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G75P04SIP-40V,-11A,RD(MAX)<8M@-10V,VTH-1 Goford Semiconductor |
2,895 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6509 pF @ 20 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP | |
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GT080N08D5N85V,65A,RD<8.5M@10V,VTH2.0V~4.0 Goford Semiconductor |
5,599 | - |
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数据手册 |
- | 8-PowerTDFN | Active | N-Channel | MOSFET (Metal Oxide) | 85 V | 65A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 1885 pF @ 50 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) | |
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G75P04D5IP-40V,-70A,RD(MAX)<6.5M@-10V,VTH Goford Semiconductor |
4,636 | - |
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数据手册 |
- | 8-PowerTDFN | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6414 pF @ 20 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) | |
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GT52N10D5IN100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor |
2,858 | - |
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数据手册 |
- | 8-PowerTDFN | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2428 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) | |
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G75P04KIP-40V,-70A,RD(MAX)<6.5M@-10V,VTH Goford Semiconductor |
3,017 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6586 pF @ 20 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 | |
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GT080N10KIN100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor |
8,490 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2394 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 | |
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G75P04TIP-40V,-70A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor |
2,177 | - |
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数据手册 |
- | TO-220-3 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6407 pF @ 20 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 | |
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GT009N04D5N40V,100A,RD<1.3M@10V,VTH1.0V~2. Goford Semiconductor |
6,998 | - |
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数据手册 |
- | 8-PowerTDFN | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 20A, 10V | 2.5V @ 250µA | 86 nC @ 10 V | ±20V | 6864 pF @ 20 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
