电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC20N65QN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
3,375 | - |
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数据手册 |
Cool MOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GT023N10QMOSFET N-CH 100V 226A 250W TO-2 Goford Semiconductor |
1,187 | - |
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数据手册 |
SGT | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 226A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 121 nC @ 10 V | ±20V | 8488 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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GC20N65QDMOSFET N-CH 650V 20A TO-247 Goford Semiconductor |
1,080 | - |
|
数据手册 |
- | - | Tube | Active | - | MOSFET (Metal Oxide) | - | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 39 nC @ 10 V | ±30V | 1729 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-247-3 |
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GC120N65QFMOSFET N-CH 650V 30A TO-247 Goford Semiconductor |
4,838 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 120mOhm @ 38A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 3100 pF @ 275 V | - | 96.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC080N65QFMOSFET N-CH 650V 50A TO-247 Goford Semiconductor |
3,952 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 80mOhm @ 16A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 4900 pF @ 380 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC030N65QFMOSFET N-CH 650V 80A TO-247 Goford Semiconductor |
4,374 | - |
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数据手册 |
- | - | Tube | Active | - | MOSFET (Metal Oxide) | - | 80A (Tc) | 10V | 30mOhm @ 20A, 10V | 5V @ 250µA | 240 nC @ 10 V | ±30V | 9500 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-247-3 |
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GC041N65QFMOSFET N-CH 650V 70A TO-247 Goford Semiconductor |
1,777 | - |
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数据手册 |
SuperJunction | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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G400P06TMOSFET P-CH 60V 32A TO-220 Goford Semiconductor |
1,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 32A (Tc) | 10V | 40mOhm @ 12A, 10V | 3V @ 250µA | - | ±20V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G18N20TMOSFET N-CH 200V 18A 110W 190m(m Goford Semiconductor |
1,000 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 31 nC @ 5 V | ±30V | 1120 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT700P08TMOSFET P-CH 80V 25A TO-220 Goford Semiconductor |
1,000 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 25A (Tc) | 10V | 72mOhm @ 2A, 10V | 3.5V @ 250µA | - | ±20V | - | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
