上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G2K6P25TMOSFET P-CH 250V 28A 300W TO-220 Goford Semiconductor |
4,223 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 28A (Tc) | 10V | 260mOhm @ 10A, 10V | 4V @ 250µA | 77 nC @ 10 V | ±20V | 2984 pF @ 125 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT085N10THMOSFET N-CH 100V 70A 100W 8.5M( Goford Semiconductor |
2,383 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 8.5mOhm @ 20A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 2940 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT045N10TN100V, 150A,RD<4.8M@10V,VTH2V~4V Goford Semiconductor |
2,078 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 10V | 4.8mOhm @ 20A, 10V | 4V @ 250µA | 73 nC @ 10 V | ±20V | 4198 pF @ 50 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT048N10TMOSFET N-CH 100V 110A 150W 4.8M Goford Semiconductor |
4,027 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.5V @ 250µA | 49 nC @ 10 V | ±20V | 3220 pF @ 50 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G080P06TP-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor |
2,024 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | 4V @ 250µA | 186 nC @ 10 V | ±20V | 14692 pF @ 30 V | - | 294W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT035N06TN-CH, 60V,170A, RD(MAX)<3.5M@10V Goford Semiconductor |
3,588 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 5064 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G18N50TMOSFET N-CH 500V 18A TO-220 Goford Semiconductor |
3,809 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tc) | 10V | 350mOhm @ 9A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 3000 pF @ 250 V | - | 189.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G040P04TMOSFET P-CH 40V 222A TO-220 Goford Semiconductor |
2,014 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 222A (Tc) | 4.5V, 10V | 3.7mOhm @ 20A, 10V | 2.5V @ 250µA | 206 nC @ 10 V | ±20V | 15087 pF @ 20 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GC280N65FMOSFET N-CH 650V 15A TO-220F Goford Semiconductor |
2,899 | - |
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数据手册 |
- | - | Tube | Active | - | MOSFET (Metal Oxide) | - | 15A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4.5V @ 250µA | 27 nC @ 10 V | ±20V | 1200 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G030N06TMOSFET N-CH 60V 223A TO-220 Goford Semiconductor |
100 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 223A (Tc) | 4.5V, 10V | 2.7mOhm @ 30A, 10V | 2.5V @ 250µA | 101 nC @ 10 V | ±20V | 11999 pF @ 30 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
