电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TK065Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage |
2,466 | - |
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数据手册 |
DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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TK35A65W5,S5XMOSFET N-CH 650V 35A TO220SIS Toshiba Semiconductor and Storage |
4,145 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK31A60W,S4VXMOSFET N-CH 600V 30.8A TO220SIS Toshiba Semiconductor and Storage |
2,151 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK040N60Z1,S1F600V DTMOS6 TO-247 40MOHM Toshiba Semiconductor and Storage |
6,022 | - |
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数据手册 |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Ta) | 10V | 400mOhm @ 21.2A, 10V | 4V @ 2.4mA | 85 nC @ 10 V | ±30V | 5200 pF @ 300 V | - | 297W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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TK31J60W,S1VQMOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage |
3,432 | - |
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数据手册 |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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SSM3K16CT(TPL3)MOSFET N-CH 20V 100MA CST3 Toshiba Semiconductor and Storage |
3,506 | - |
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数据手册 |
π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 |
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SSM3K15FS,LFMOSFET N-CH 30V 100MA SSM Toshiba Semiconductor and Storage |
9,987 | - |
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数据手册 |
π-MOSVI | SC-75, SOT-416 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SSM |
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2SK2034TE85LFMOSFET N-CH 20V 100MA SC70 Toshiba Semiconductor and Storage |
4,018 | - |
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数据手册 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SC-70 |
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SSM3K7002BF,LFMOSFET N-CH 60V 200MA SC59 Toshiba Semiconductor and Storage |
2,857 | - |
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数据手册 |
U-MOSIV | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | - | - | ±20V | 17 pF @ 25 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SC-59 |
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SSM3K7002BS,LFMOSFET N-CH 60V 200MA S-MINI Toshiba Semiconductor and Storage |
2,704 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 17 pF @ 25 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | S-Mini |
