| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM3J15CT(TPL3)MOSFET P-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
6,885 | - |
|
数据手册 |
π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | - | - | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 |
|
SSM3K17SU,LFMOSFET N-CH 50V 100MA USM Toshiba Semiconductor and Storage |
6,102 | - |
|
数据手册 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 100mA (Ta) | - | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | - | 7 pF @ 3 V | - | 150mW (Ta) | - | - | - | Surface Mount | USM |
|
SSM3J114TU(TE85L)MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage |
3,983 | - |
|
数据手册 |
- | 3-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7 nC @ 4 V | ±8V | 331 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFM |
|
SSM3J16CT(TPL3)MOSFET P-CH 20V 100MA CST3 Toshiba Semiconductor and Storage |
2,288 | - |
|
数据手册 |
π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 11 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 |
|
SSM3K35MFV(TPL3)MOSFET N-CH 20V 180MA VESM Toshiba Semiconductor and Storage |
3,753 | - |
|
数据手册 |
π-MOSVI | SOT-723 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 9.5 pF @ 3 V | - | 150mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VESM |
|
2SK1829TE85LFMOSFET N-CH 20V 50MA SC70 Toshiba Semiconductor and Storage |
4,612 | - |
|
数据手册 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 50mA (Ta) | 2.5V | 40Ohm @ 10mA, 2.5V | - | - | 10V | 5.5 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SC-70 |
|
SSM3K15ACT(TPL3)MOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
3,038 | - |
|
数据手册 |
U-MOSIII | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 |
|
TPCF8A01(TE85L)MOSFET N-CH 20V 3A VS-8 Toshiba Semiconductor and Storage |
4,654 | - |
|
数据手册 |
U-MOSIII | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2V, 4.5V | 49mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5 nC @ 5 V | ±12V | 590 pF @ 10 V | Schottky Diode (Isolated) | 330mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-8 (2.9x1.5) |
|
SSM3K15CT(TPL3)MOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
2,369 | - |
|
数据手册 |
π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 |
|
SSM5G10TU(TE85L,F)MOSFET P-CH 20V 1.5A UFV Toshiba Semiconductor and Storage |
1,746 | - |
|
数据手册 |
U-MOSIII | 6-SMD (5 Leads), Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 1.8V, 4V | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4 nC @ 4 V | ±8V | 250 pF @ 10 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFV |

