电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TK2R9E10PL,S1XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
3,460 | - |
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数据手册 |
U-MOSIX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 306W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TK13A55DA(STA4,QM)MOSFET N-CH 550V 12.5A TO220SIS Toshiba Semiconductor and Storage |
9,049 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12.5A (Ta) | 10V | 480mOhm @ 6.3A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK10J80E,S1EMOSFET N-CH 800V 10A TO3P Toshiba Semiconductor and Storage |
4,998 | - |
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数据手册 |
π-MOSVIII | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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TK14A55D(STA4,Q,M)MOSFET N-CH 550V 14A TO220SIS Toshiba Semiconductor and Storage |
4,296 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 14A (Ta) | 10V | 370mOhm @ 7A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK17E65W,S1XMOSFET N-CH 650V 17.3A TO220 Toshiba Semiconductor and Storage |
1,536 | - |
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数据手册 |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK14N65W,S1FMOSFET N-CH 650V 13.7A TO247 Toshiba Semiconductor and Storage |
1,627 | - |
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数据手册 |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK125N60Z1,S1F6OOV DTMOS6 TO-247 125MOHM Toshiba Semiconductor and Storage |
2,103 | - |
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数据手册 |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 125mOhm @ 6A, 10V | 4V @ 730µA | 28 nC @ 10 V | ±30V | 1620 pF @ 300 V | - | 150W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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XPQ1R00AQB,LXHQ100V UMOS10 L-TOGL 1.03MOHM Toshiba Semiconductor and Storage |
8,725 | - |
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数据手册 |
U-MOSX-H | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 300A (Ta) | 6V, 10V | 1.03mOhm @ 150A, 10V | 3.5V @ 1.5mA | 269 nC @ 10 V | ±20V | 21450 pF @ 10 V | - | 750W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | L-TOGL™ |
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TK090Z65Z,S1FMOSFET N-CH 650V 30A TO247-4L Toshiba Semiconductor and Storage |
2,633 | - |
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数据手册 |
DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
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TK110Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 Toshiba Semiconductor and Storage |
1,390 | - |
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数据手册 |
DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
