电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK3A90E,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
8,738 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.5A (Ta) | 10V | 4.6Ohm @ 1.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 650 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK6A45DA(STA4,Q,M)MOSFET N-CH 450V 5.5A TO220SIS Toshiba Semiconductor and Storage |
4,664 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 5.5A (Ta) | 10V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | - | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPC8133,LQ(SMOSFET P-CH 40V 9A 8SOP Toshiba Semiconductor and Storage |
2,236 | - |
|
数据手册 |
U-MOSVI | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | 2V @ 500µA | 64 nC @ 10 V | +20V, -25V | 2900 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
TK42E12N1,S1XMOSFET N CH 120V 88A TO-220 Toshiba Semiconductor and Storage |
2,490 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3100 pF @ 60 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK5A55D(STA4,Q,M)MOSFET N-CH 550V 5A TO220SIS Toshiba Semiconductor and Storage |
1,760 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 5A (Ta) | 10V | 1.7Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK7A45DA(STA4,Q,M)MOSFET N-CH 450V 6.5A TO220SIS Toshiba Semiconductor and Storage |
9,863 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 6.5A (Ta) | 10V | 1.2Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A90E,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
3,233 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.5A (Ta) | 10V | 3.1Ohm @ 2.3A, 10V | 4V @ 450µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK6A55DA(STA4,Q,M)MOSFET N-CH 550V 5.5A TO220SIS Toshiba Semiconductor and Storage |
7,094 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 5.5A (Ta) | 10V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK7A50D(STA4,Q,M)MOSFET N-CH 500V 7A TO220SIS Toshiba Semiconductor and Storage |
4,112 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK6A53D(STA4,Q,M)MOSFET N-CH 525V 6A TO220SIS Toshiba Semiconductor and Storage |
2,947 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 525 V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
