电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK9A65W,S5XMOSFET N-CH 650V 9.3A TO220SIS Toshiba Semiconductor and Storage |
2,430 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9.3A (Ta) | 10V | 500mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK72A08N1,S4XMOSFET N-CH 75V 80A TO220SIS Toshiba Semiconductor and Storage |
3,051 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Ta) | 10V | 4.5mOhm @ 40A, 10V | 4V @ 1mA | 175 nC @ 10 V | ±20V | 8200 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK12A45D(STA4,Q,M)MOSFET N-CH 450V 12A TO220SIS Toshiba Semiconductor and Storage |
3,091 | - |
|
数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK13E25D,S1X(SMOSFET N-CH 250V 13A TO220-3 Toshiba Semiconductor and Storage |
6,166 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 102W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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TK10A55D(STA4,Q,M)MOSFET N-CH 550V 10A TO220SIS Toshiba Semiconductor and Storage |
3,557 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPH1100CQ5,LQ150V UMOS10-H SOP ADVANCE Toshiba Semiconductor and Storage |
2,961 | - |
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数据手册 |
U-MOSX-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 90A (Ta), 49A (Tc) | 8V, 10V | 11.1mOhm @ 24.5A, 10V | 4.5V @ 800µA | 38 nC @ 10 V | ±20V | 4400 pF @ 75 V | - | 3W (Ta), 180W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TK72E12N1,S1XMOSFET N CH 120V 72A TO-220 Toshiba Semiconductor and Storage |
6,686 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 72A (Ta) | 10V | 4.4mOhm @ 36A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 8100 pF @ 60 V | - | 255W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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TK12A53D(STA4,Q,M)MOSFET N-CH 525V 12A TO220SIS Toshiba Semiconductor and Storage |
2,379 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 525 V | 12A (Ta) | 10V | 580mOhm @ 6A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK13A50DA(STA4,Q,MMOSFET N-CH 500V 12.5A TO220SIS Toshiba Semiconductor and Storage |
3,062 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12.5A (Ta) | 10V | 470mOhm @ 6.3A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK12A55D(STA4,Q,M)MOSFET N-CH 550V 12A TO220SIS Toshiba Semiconductor and Storage |
8,584 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Ta) | 10V | 570mOhm @ 6A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
