电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK100A08N1,S4XMOSFET N-CH 80V 100A TO220SIS Toshiba Semiconductor and Storage |
9,581 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 9000 pF @ 40 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK8A60W5,S5VXMOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage |
5,085 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Ta) | 10V | 540mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK17N65W,S1FMOSFET N-CH 650V 17.3A TO247 Toshiba Semiconductor and Storage |
7,679 | - |
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数据手册 |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK40E10N1,S1XMOSFET N CH 100V 90A TO220 Toshiba Semiconductor and Storage |
3,050 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 126W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK25E60X,S1XMOSFET N-CH 600V 25A TO220 Toshiba Semiconductor and Storage |
9,253 | - |
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数据手册 |
DTMOSIV-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK65A10N1,S4XMOSFET N-CH 100V 65A TO220SIS Toshiba Semiconductor and Storage |
4,735 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK14E65W5,S1XMOSFET N-CH 650V 13.7A TO220 Toshiba Semiconductor and Storage |
8,556 | - |
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数据手册 |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK17V65W,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,669 | - |
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数据手册 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 210mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 156W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK31N60W,S1VFMOSFET N CH 600V 30.8A TO247 Toshiba Semiconductor and Storage |
7,400 | - |
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数据手册 |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK16J60W5,S1VQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,055 | - |
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数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Through Hole | TO-3P(N) |
