电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK290A60Y,S4XMOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage |
7,408 | - |
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数据手册 |
DTMOSV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A60W,S4VXMOSFET N-CH 600V 5.4A TO220SIS Toshiba Semiconductor and Storage |
9,011 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK1K7A60F,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
2,471 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4V @ 460µA | 16 nC @ 10 V | ±30V | 560 pF @ 300 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK3R2A08QM,S4XUMOS10 TO-220SIS 80V 3.2MOHM Toshiba Semiconductor and Storage |
8,113 | - |
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数据手册 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 92A (Tc) | 6V, 10V | 3.2mOhm @ 46A, 10V | 3.5V @ 1.3mA | 102 nC @ 10 V | ±20V | 7670 pF @ 40 V | - | 45W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK3A60DA(Q,M)MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage |
2,368 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK58A06N1,S4XMOSFET N-CH 60V 58A TO220SIS Toshiba Semiconductor and Storage |
4,526 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK16E60W5,S1VXMOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage |
4,002 | - |
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数据手册 |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK560A65Y,S4XMOSFET N-CH 650V 7A TO220SIS Toshiba Semiconductor and Storage |
2,146 | - |
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数据手册 |
DTMOSV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK7P60W5,RVQMOSFET N-CH 600V 7A DPAK Toshiba Semiconductor and Storage |
3,950 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 670mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK12E80W,S1XMOSFET N-CH 800V 11.5A TO220 Toshiba Semiconductor and Storage |
8,460 | - |
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数据手册 |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23 nC @ 10 V | ±20V | 1400 pF @ 300 V | - | 165W (Tc) | 150°C | - | - | Through Hole | TO-220 |
