电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TPH9R00CQ5,LQ150V U-MOS X-H SOP-ADVANCE(N) 9M Toshiba Semiconductor and Storage |
1,848 | - |
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数据手册 |
U-MOSX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 64A (Tc) | 8V, 10V | 9mOhm @ 32A, 10V | 4.5V @ 1mA | 44 nC @ 10 V | ±20V | 5400 pF @ 75 V | - | 210W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK055U60Z1,RQ600V DTMOS VI TOLL 55MOHM Toshiba Semiconductor and Storage |
5,820 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Ta) | 10V | 55mOhm @ 15A, 10V | 4V @ 1.69mA | 65 nC @ 10 V | ±30V | 3680 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Surface Mount | TOLL |
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SSM3K335R,LFMOSFET N CH 30V 6A SOT-23F Toshiba Semiconductor and Storage |
2,904 | - |
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数据手册 |
U-MOSVII-H | SOT-23-3 Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 38mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7 nC @ 4.5 V | ±20V | 340 pF @ 15 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-23F |
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TK110A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
9,736 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 4.5V, 10V | 10.8mOhm @ 18A, 10V | 2.5V @ 300µA | 33 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 36W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TPH1R405PL,L1QMOSFET N-CH 45V 120A 8SOP Toshiba Semiconductor and Storage |
6,452 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 120A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.4V @ 500µA | 74 nC @ 10 V | ±20V | 6300 pF @ 22.5 V | - | 960mW (Ta), 132W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK16A60W5,S4VXMOSFET N-CH 600V 15.8A TO220SIS Toshiba Semiconductor and Storage |
4,612 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK4K1A60F,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,947 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.1Ohm @ 1A, 10V | 4V @ 190µA | 8 nC @ 10 V | ±30V | 270 pF @ 300 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK40E06N1,S1XMOSFET N-CH 60V 40A TO220 Toshiba Semiconductor and Storage |
1,853 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23 nC @ 10 V | ±20V | 1700 pF @ 30 V | - | 67W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK1K2A60F,S4XMOSFET N-CH 600V 6A TO220SIS Toshiba Semiconductor and Storage |
6,491 | - |
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数据手册 |
U-MOSIX | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Ta) | 10V | 1.2Ohm @ 3A, 10V | 4V @ 630µA | 21 nC @ 10 V | ±30V | 740 pF @ 300 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK6R8A08QM,S4XUMOS10 TO-220SIS 80V 6.8MOHM Toshiba Semiconductor and Storage |
1,198 | - |
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数据手册 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 58A (Tc) | 6V, 10V | 6.8mOhm @ 29A, 10V | 3.5V @ 500µA | 39 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 41W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
