电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TW140Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 14 Toshiba Semiconductor and Storage |
1,834 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 18V | 191mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TW083Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 83 Toshiba Semiconductor and Storage |
3,765 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 118mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TW027Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 27 Toshiba Semiconductor and Storage |
3,078 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 38mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TW060Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 6 Toshiba Semiconductor and Storage |
3,506 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TW015Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 15 Toshiba Semiconductor and Storage |
1,605 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 22mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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SSM3J118TU(TE85L)MOSFET P-CH 30V 1.4A UFM Toshiba Semiconductor and Storage |
3,441 | - |
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数据手册 |
U-MOSII | 3-SMD, Flat Leads | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | - | - | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFM |
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SSM3J46CTB(TPL3)MOSFET P-CH 20V 2A CST3B Toshiba Semiconductor and Storage |
2,187 | - |
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数据手册 |
U-MOSVI | 3-SMD, No Lead | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | - | 150°C (TJ) | - | - | Surface Mount | CST3B |
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TK2R4A08QM,S4XUMOS10 TO-220SIS 80V 2.4MOHM Toshiba Semiconductor and Storage |
1,627 | - |
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数据手册 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 179 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 47W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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SSM3J327R,LFMOSFET P-CH 20V 3.9A SOT23F Toshiba Semiconductor and Storage |
6,138 | - |
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数据手册 |
U-MOSVI | SOT-23-3 Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-23F |
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TPH1R712MD,L1QMOSFET P-CH 20V 60A 8SOP Toshiba Semiconductor and Storage |
3,557 | - |
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数据手册 |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 2.5V, 4.5V | 1.7mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182 nC @ 5 V | ±12V | 10900 pF @ 10 V | - | 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
