电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK5Q60W,S1VQMOSFET N CH 600V 5.4A IPAK Toshiba Semiconductor and Storage |
3,937 | - |
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数据手册 |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK7A60W,S4VXMOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage |
3,943 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK9A55DA(STA4,Q,M)MOSFET N-CH 550V 8.5A TO220SIS Toshiba Semiconductor and Storage |
3,098 | - |
|
数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 8.5A (Ta) | 10V | 860mOhm @ 4.3A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK9A60D(STA4,Q,M)MOSFET N-CH 600V 9A TO220SIS Toshiba Semiconductor and Storage |
1,812 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Ta) | 10V | 830mOhm @ 4.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK12Q60W,S1VQMOSFET N CH 600V 11.5A IPAK Toshiba Semiconductor and Storage |
2,855 | - |
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数据手册 |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK12A50W,S5XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
2,898 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK7Q60W,S1VQMOSFET N-CH 600V 7A IPAK Toshiba Semiconductor and Storage |
4,839 | - |
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数据手册 |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK7A65D(STA4,Q,M)MOSFET N-CH 650V 7A TO220SIS Toshiba Semiconductor and Storage |
2,771 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Ta) | 10V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK7A80W,S4XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
4,804 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK6A60W,S4VXMOSFET N-CH 600V 6.2A TO220SIS Toshiba Semiconductor and Storage |
1,027 | - |
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数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Ta) | 10V | 750mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
