电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK7A55D(STA4,Q,M)MOSFET N-CH 550V 7A TO220SIS Toshiba Semiconductor and Storage |
2,840 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK3A65D(STA4,Q,M)MOSFET N-CH 650V 3A TO220SIS Toshiba Semiconductor and Storage |
4,326 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 3A (Ta) | 10V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A65DA(STA4,Q,M)MOSFET N-CH 650V 4.5A TO220SIS Toshiba Semiconductor and Storage |
3,046 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A65D(STA4,Q,M)MOSFET N-CH 650V 5A TO220SIS Toshiba Semiconductor and Storage |
3,511 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK11A50D(STA4,Q,M)MOSFET N-CH 500V 11A TO220SIS Toshiba Semiconductor and Storage |
4,561 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Ta) | 10V | 600mOhm @ 5.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK56E12N1,S1XMOSFET N CH 120V 56A TO-220 Toshiba Semiconductor and Storage |
3,620 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 7mOhm @ 28A, 10V | 4V @ 1mA | 69 nC @ 10 V | ±20V | 4200 pF @ 60 V | - | 168W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK8Q65W,S1QMOSFET N-CH 650V 7.8A IPAK Toshiba Semiconductor and Storage |
1,948 | - |
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数据手册 |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK8A55DA(STA4,Q,M)MOSFET N-CH 550V 7.5A TO220SIS Toshiba Semiconductor and Storage |
3,939 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 7.5A (Ta) | 10V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK18A30D,S5XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
2,689 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 18A (Ta) | 10V | 139mOhm @ 9A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2600 pF @ 100 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK11A45D(STA4,Q,M)MOSFET N-CH 450V 11A TO220SIS Toshiba Semiconductor and Storage |
1,932 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 11A (Ta) | 10V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
