电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK3R9E10PL,S1XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
5,271 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | 2.5V @ 1mA | 96 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 230W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TK10A80E,S4XMOSFET N-CH 800V 10A TO220SIS Toshiba Semiconductor and Storage |
9,697 | - |
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数据手册 |
π-MOSVIII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK7J90E,S1EMOSFET N-CH 900V 7A TO3P Toshiba Semiconductor and Storage |
2,280 | - |
|
数据手册 |
π-MOSVIII | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 200W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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TK100A06N1,S4XMOSFET N-CH 60V 100A TO220SIS Toshiba Semiconductor and Storage |
6,673 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 10500 pF @ 30 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK72A12N1,S4XMOSFET N-CH 120V 72A TO220SIS Toshiba Semiconductor and Storage |
5,341 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 72A (Tc) | 10V | 4.5mOhm @ 36A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 8100 pF @ 60 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TJ200F04M3L,LXHQMOSFET P-CH 40V 200A TO220SM Toshiba Semiconductor and Storage |
7,070 | - |
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数据手册 |
U-MOSVI | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3V @ 1mA | 460 nC @ 10 V | +10V, -20V | 1280 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TK20E60W5,S1VXX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
2,217 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | 150°C | - | - | Through Hole | TO-220 |
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TK100A10N1,S4XMOSFET N-CH 100V 100A TO220SIS Toshiba Semiconductor and Storage |
4,985 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK39N60W,S1VFMOSFET N CH 600V 38.8A TO247 Toshiba Semiconductor and Storage |
3,579 | - |
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数据手册 |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK065N65Z,S1FMOSFET N-CH 650V 38A TO247 Toshiba Semiconductor and Storage |
2,404 | - |
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数据手册 |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Through Hole | TO-247 |
