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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM3J14TTE85LFMOSFET P-CH 30V 2.7A TSM Toshiba Semiconductor and Storage |
8,786 | - |
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数据手册 |
U-MOSII | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.7A (Ta) | 4V, 10V | 85mOhm @ 1.35A, 10V | - | - | ±20V | 413 pF @ 15 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSM |
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TPH3R506PL,LQMOSFET N-CH 60V 94A 8SOP Toshiba Semiconductor and Storage |
4,278 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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SSM3K316T(TE85L,F)MOSFET N-CH 30V 4A TSM Toshiba Semiconductor and Storage |
3,090 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 10V | 53mOhm @ 3A, 10V | 1V @ 1mA | 4.3 nC @ 4 V | ±12V | 270 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSM |
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SSM6P16FE(TE85L,F)MOSFET P-CH 20V 0.1A ES6 Toshiba Semiconductor and Storage |
8,014 | - |
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数据手册 |
- | SOT-563, SOT-666 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | - | 8Ohm @ 10mA, 4V | - | - | - | 11 pF @ 3 V | - | 150mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ES6 |
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SSM3K303T(TE85L,F)MOSFET N-CH 30V 2.9A TSM Toshiba Semiconductor and Storage |
8,283 | - |
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数据手册 |
π-MOSVII | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.9A (Ta) | 4V, 10V | 83mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3 nC @ 4 V | ±20V | 180 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSM |
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SSM3J304T(TE85L,F)MOSFET P-CH 20V 2.3A TSM Toshiba Semiconductor and Storage |
8,387 | - |
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数据手册 |
U-MOSIII | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.3A (Ta) | 1.8V, 4V | 127mOhm @ 1A, 4V | - | 6.1 nC @ 4 V | ±8V | 335 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSM |
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SSM5H12TU(TE85L,F)MOSFET N-CH 30V 1.9A UFV Toshiba Semiconductor and Storage |
5,087 | - |
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数据手册 |
U-MOSIII | 6-SMD (5 Leads), Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFV |
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SSM3K59CTB,L3FMOSFET N-CH 40V 2A CST3B Toshiba Semiconductor and Storage |
6,702 | - |
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数据手册 |
U-MOSVII-H | 3-SMD, No Lead | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 2A (Ta) | 1.8V, 8V | 215mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1 nC @ 4.2 V | ±12V | 130 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3B |
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SSM3J144TU,LXHFSMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage |
4,170 | - |
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数据手册 |
U-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | +6V, -8V | 290 pF @ 10 V | - | 500mW (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | UFM |
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TPC8115(TE12L,Q,M)MOSFET P-CH 20V 10A 8SOP Toshiba Semiconductor and Storage |
8,077 | - |
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数据手册 |
U-MOSIV | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.8V, 4.5V | 10mOhm @ 5A, 4.5V | 1.2V @ 200µA | 115 nC @ 5 V | ±8V | 9130 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP (5.5x6.0) |
