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场效应晶体管（FETs）、MOSFETs
| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPCA8047-H(T2L1,VMMOSFET N-CH 40V 32A 8SOP Toshiba Semiconductor and Storage |
6,282 |
|
数据手册 |
U-MOSVI-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 32A (Ta) | 4.5V, 10V | 7.3mOhm @ 16A, 10V | 2.3V @ 500µA | 43 nC @ 10 V | ±20V | 3365 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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|
TPCC8005-H(TE12LQMMOSFET N-CH 30V 26A 8TSON Toshiba Semiconductor and Storage |
4,056 |
|
数据手册 |
U-MOSVI-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 26A (Ta) | 4.5V, 10V | 6.4mOhm @ 13A, 10V | 2.3V @ 500µA | 35 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
|
|
TPCC8006-H(TE12LQMMOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage |
8,322 |
|
数据手册 |
U-MOSVI-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | 4.5V, 10V | 8mOhm @ 11A, 10V | 2.3V @ 200µA | 27 nC @ 10 V | ±20V | 2200 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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|
TPCC8A01-H(TE12LQMMOSFET N-CH 30V 21A 8TSON Toshiba Semiconductor and Storage |
3,442 |
|
数据手册 |
U-MOSV-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20 nC @ 10 V | ±20V | 1900 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TPCC8001-H(TE12LQMMOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage |
3,588 |
|
数据手册 |
U-MOSV-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
|
|
TPCC8002-H(TE12LQMMOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage |
9,408 |
|
数据手册 |
U-MOSV-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TPCC8002-H(TE12L,QMOSFET N-CH 30V 22A 8TSON Toshiba Semiconductor and Storage |
6,876 |
|
数据手册 |
U-MOSV-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
|
TPN2R503NC,L1QMOSFET N CH 30V 40A 8TSON-ADV Toshiba Semiconductor and Storage |
7,037 |
|
数据手册 |
U-MOSVIII | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.3V @ 500µA | 40 nC @ 10 V | ±20V | 2230 pF @ 15 V | - | 700mW (Ta), 35W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
2SK2883(TE24L,Q)MOSFET N-CH 800V 3A TO220SM Toshiba Semiconductor and Storage |
3,102 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 3.6Ohm @ 1.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 75W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
|
TPN14006NH,L1QMOSFET N CH 60V 13A 8TSON-ADV Toshiba Semiconductor and Storage |
9,535 |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta) | 6.5V, 10V | 14mOhm @ 6.5A, 10V | 4V @ 200µA | 15 nC @ 10 V | ±20V | 1300 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
