| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF644PBF-BE3MOSFET N-CH 250V 14A TO220AB Vishay Siliconix |
457 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | - | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIJ4106DP-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
6,000 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.8A (Ta), 59A (Tc) | 7.5V, 10V | 8.3mOhm @ 15A, 10V | 3.8V @ 250µA | 64 nC @ 10 V | ±20V | 3610 pF @ 50 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF9Z14STRLPBFMOSFET P-CH 60V 6.7A D2PAK Vishay Siliconix |
766 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFR9120PBF-BE3P-CHANNEL 100V Vishay Siliconix |
3,000 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFR320TRPBF-BE3N-CHANNEL 400V Vishay Siliconix |
1,918 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SISS5108DN-T1-GE3N-CHANNEL 100-V (D-S) MOSFET POW Vishay Siliconix |
12,010 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.4A (Ta), 55.9A (Tc) | 7.5V, 10V | 10.5mOhm @ 10A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SIR5112DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
5,851 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12.6A (Ta), 42.6A (Tc) | 7.5V, 10V | 14.9mOhm @ 10A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFRC20PBF-BE3N-CHANNEL 600V Vishay Siliconix |
3,000 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SIHP12N50E-BE3N-CHANNEL 500V Vishay Siliconix |
836 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 886 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIR5110DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
11,972 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.5A (Ta), 47.6A (Tc) | 7.5V, 10V | 6mOhm @ 35A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 920 pF @ 50 V | - | 4.8W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |

