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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SI4894BDY-T1-GE3MOSFET N-CH 30V 8.9A 8SO Vishay Siliconix |
2,500 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.9A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 38 nC @ 10 V | ±20V | 1580 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SIRA54DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
5,980 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.35mOhm @ 15A, 10V | 2.3V @ 250µA | 48 nC @ 4.5 V | +20V, -16V | 5300 pF @ 20 V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJ162EP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
2,950 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 166A (Tc) | 10V | 5mOhm @ 15A, 10V | 2.5V @ 250µA | 51 nC @ 10 V | ±20V | 3930 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SIHF9630STRL-GE3MOSFET P-CH 200V 6.5A D2PAK Vishay Siliconix |
783 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIR4409DP-T1-RE3P-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
5,204 | - |
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数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 17.2A (Ta), 60.6A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 2.3V @ 250µA | 126 nC @ 10 V | ±20V | 5670 pF @ 20 V | - | 4.8W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFR110TRLPBFMOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
2,990 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SUD23N06-31-T4-GE3MOSFET N-CH 60V 21.4A TO252 Vishay Siliconix |
2,470 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SQJA46EP-T1_GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
14,458 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 10V | 3mOhm @ 10A, 10V | 3.5V @ 250µA | 105 nC @ 10 V | ±20V | 5000 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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IRFR014PBF-BE3MOSFET N-CH 60V 7.7A DPAK Vishay Siliconix |
1,724 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | - | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SISH112DN-T1-GE3MOSFET N-CH 30V 11.3A PPAK Vishay Siliconix |
5,612 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27 nC @ 4.5 V | ±12V | 2610 pF @ 15 V | - | 1.5W (Tc) | -50°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
