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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIJA58ADP-T1-GE3MOSFET N-CH 40V 32.3A/109A PPAK Vishay Siliconix |
5,185 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 32.3A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61 nC @ 10 V | +20V, -16V | 3030 pF @ 20 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQ3460EV-T1_GE3MOSFET N-CH 20V 8A 6TSOP Vishay Siliconix |
1,053 | - |
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数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 1.8V, 4.5V | 30mOhm @ 5.1A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±8V | 1060 pF @ 10 V | - | 3.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 6-TSOP |
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SQS180ENW-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
2,481 | - |
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数据手册 |
TrenchFET® GenIV | PowerPAK® 1212-8SLW | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 72A (Tc) | 10V | 8.67mOhm @ 10A, 10V | 3.5V @ 250µA | 56 nC @ 10 V | ±20V | 3092 pF @ 25 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
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SQS120ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix |
3,000 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8SLW | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 192A (Tc) | 4.5V, 10V | 1.8mOhm @ 10A, 10V | 2.5V @ 250µA | 88 nC @ 10 V | ±20V | 4590 pF @ 25 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
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SIHF530-GE3MOSFET N-CH 100V 14A TO220AB Vishay Siliconix |
971 | - |
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数据手册 |
- | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SIR164ADP-T1-GE3MOSFET N-CH 30V 35.9A/40A PPAK Vishay Siliconix |
2,814 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35.9A (Ta), 40A (Tc) | 4.5V, 10V | 2.2mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | +20V, -16V | 3595 pF @ 15 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIHF530STRL-GE3MOSFET N-CH 100V 14A D2PAK Vishay Siliconix |
700 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHF9520S-GE3MOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix |
688 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIJA54DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
9,488 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.35mOhm @ 15A, 10V | 2.4V @ 250µA | 104 nC @ 10 V | +20V, -16V | 5300 pF @ 20 V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFBC20PBF-BE3MOSFET N-CH 600V 2.2A TO220AB Vishay Siliconix |
972 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
