电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SIR166DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
2,380 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3.2mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | ±20V | 3340 pF @ 15 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SISS60DN-T1-GE3MOSFET N-CH 30V 50.1/181.8A PPAK Vishay Siliconix |
5,995 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50.1A (Ta), 181.8A (Tc) | 4.5V, 10V | 1.31mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +16V, -12V | 3960 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SISS66DN-T1-GE3MOSFET N-CH 30V 49.1/178.3A PPAK Vishay Siliconix |
4,562 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 49.1A (Ta), 178.3A (Tc) | 4.5V, 10V | 1.38mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +20V, -16V | 3327 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SIHU7N60E-GE3MOSFET N-CH 600V 7A IPAK Vishay Siliconix |
2,990 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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IRFR9014PBF-BE3P-CHANNEL 60V Vishay Siliconix |
2,968 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SISS5112DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
11,904 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 40.7A (Tc) | 7.5V, 10V | 14.9mOhm @ 10A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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IRFR220PBF-BE3N-CHANNEL 200V Vishay Siliconix |
3,000 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRFR9110TRLPBFMOSFET P-CH 100V 3.1A DPAK Vishay Siliconix |
3,000 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SIHU4N80AE-GE3MOSFET N-CH 800V 4.3A IPAK Vishay Siliconix |
2,994 | - |
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数据手册 |
E | TO-251-3 Long Leads, IPAK, TO-251AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251) |
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SISS5110DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
12,000 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.4A (Ta), 46.4A (Tc) | 7.5V, 10V | 8.9mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±25V | 920 pF @ 50 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
