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场效应晶体管（FETs）、MOSFETs
| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQS140ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
3,348 |
|
数据手册 |
TrenchFET® GenIV | PowerPAK® 1212-8SLW | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 153A (Tc) | 4.5V, 10V | 2.53mOhm @ 10A, 10V | 2.5V @ 250µA | 80 nC @ 10 V | ±20V | 4051 pF @ 25 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
|
|
SQRS152ELP-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
2,642 |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | 4.5V, 10V | 5mOhm @ 15A, 10V | 2.2V @ 250µA | 34 nC @ 10 V | ±20V | 1633 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8SW |
|
SISS30DN-T1-GE3MOSFET N-CH 80V 15.9A/54.7A PPAK Vishay Siliconix |
12,687 |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 15.9A (Ta), 54.7A (Tc) | 7.5V, 10V | 8.25mOhm @ 10A, 10V | 3.8V @ 250µA | 40 nC @ 10 V | ±20V | 1666 pF @ 10 V | - | 4.8W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SIR4608DP-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
6,038 |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.1A (Ta), 42.8A (Tc) | 7.5V, 10V | 11.8mOhm @ 10A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 740 pF @ 30 V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR618DP-T1-GE3MOSFET N-CH 200V 14.2A PPAK SO-8 Vishay Siliconix |
4,603 |
|
数据手册 |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.2A (Tc) | 7.5V, 10V | 95mOhm @ 8A, 10V | 4V @ 250µA | 16 nC @ 7.5 V | ±20V | 740 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIRA58ADP-T1-RE3MOSFET N-CH 40V 32.3A/109A PPAK Vishay Siliconix |
7,340 |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 32.3A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61 nC @ 10 V | +20V, -16V | 3030 pF @ 20 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SIRA72DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
6,000 |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.4V @ 250µA | 30 nC @ 4.5 V | +20V, -16V | 3240 pF @ 20 V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SIR500DP-T1-UE3N-CHANNEL 30 V (D-S) MOSFET 150 Vishay Siliconix |
6,000 |
|
数据手册 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 85.9A (Ta), 350.8A (Tc) | 4.5V, 10V | 0.47mOhm @20A, 10V | 2.2V @ 250µA | 180 nC @ 10 V | +16V, -12V | 8960 pF @ 15 V | - | 6.25W (Ta), 104.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR624DP-T1-RE3MOSFET N-CH 200V 5.7A/18.6A PPAK Vishay Siliconix |
5,909 |
|
数据手册 |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.7A (Ta), 18.6A (Tc) | 7.5V, 10V | 60mOhm @ 10A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1110 pF @ 100 V | - | 5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHD2N80AE-GE3MOSFET N-CH 800V 2.9A DPAK Vishay Siliconix |
3,000 |
|
数据手册 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.9A (Tc) | 10V | 2.9Ohm @ 500mA, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 180 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
