| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIRA90DP-T1-GE3MOSFET N-CH 30V 100A PPAK SO-8 Vishay Siliconix |
6,357 | - |
|
数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 0.8mOhm @ 20A, 10V | 2V @ 250µA | 153 nC @ 10 V | +20V, -16V | 10180 pF @ 15 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQR97N06-6M3L_GE3MOSFET N-CH 60V 50A TO252 Vishay Siliconix |
1,992 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 97A (Tc) | 4.5V, 10V | 6.3mOhm @ 25A, 10V | 2.5V @ 250µA | 125 nC @ 10 V | ±20V | 6060 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
|
SIHFR9310TR-GE3MOSFET P-CH 400V 1.8A DPAK Vishay Siliconix |
1,638 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SISD5300DN-T1-GE3N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix |
5,835 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-F | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 62A (Ta), 198A (Tc) | 4.5V, 10V | 0.87mOhm @ 15A, 10V | 2V @ 250µA | 36.2 nC @ 10 V | +16V, -12V | 5030 pF @ 15 V | - | 5.4W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-F |
|
IRFR9210PBF-BE3P-CHANNEL 200V Vishay Siliconix |
3,000 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SISS4402DN-T1-GE3N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
11,900 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35.5A (Ta), 128A (Tc) | 4.5V, 10V | 2.2mOhm @ 15A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | +20V, -16V | 3850 pF @ 20 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SISH116DN-T1-GE3MOSFET N-CH 40V 10.5A PPAK Vishay Siliconix |
6,000 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 10.5A (Ta) | 4.5V, 10V | 7.8mOhm @ 16.4A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
|
SIR5623DP-T1-RE3P-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
10,693 | - |
|
数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 10.5A (Ta), 37.1A(Tc) | 4.5V, 10V | 24mOhm @ 10A, 10V | 2.6V @ 250µA | 33 nC @ 10 V | ±20V | 1575 pF @ 30 V | - | 4.8W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR5108DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
12,000 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.4A (Ta), 55.9A (Tc) | 7.5V, 10V | 7.45mOhm @ 10A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIJ4108DP-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
11,722 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.2A (Ta), 56.7A (Tc) | 7.5V, 10V | 52mOhm @ 10A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±20V | 2440 pF @ 50 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |

