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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHA20N50E-E3MOSFET N-CH 500V 19A TO220 Vishay Siliconix |
496 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIRS4302DP-T1-GE3N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix |
11,921 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 87A (Ta), 478A (Tc) | 4.5V, 10V | 0.57mOhm @ 20A, 10V | 2.2V @ 250µA | 230 nC @ 10 V | +20V, -16V | 10150 pF @ 15 V | - | 6.9W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHB25N50E-GE3MOSFET N-CH 500V 26A TO263 Vishay Siliconix |
1,000 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIDR510EP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix |
5,782 | - |
|
数据手册 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta), 148A (Tc) | 7.5V, 10V | 3.6mOhm @ 20A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 4980 pF @ 50 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
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IRFIBF20GPBFMOSFET N-CH 900V 1.2A TO220-3 Vishay Siliconix |
988 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.2A (Tc) | 10V | 8Ohm @ 720mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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SIHB150N60E-GE3E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix |
992 | - |
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数据手册 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 158mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRL640STRRPBFMOSFET N-CH 200V 17A D2PAK Vishay Siliconix |
3,200 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66 nC @ 5 V | ±10V | 1800 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIDR570EP-T1-RE3N-CHANNEL 150 V (D-S) 175C MOSFE Vishay Siliconix |
5,990 | - |
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数据手册 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 30.8A (Ta), 90.9A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
|
IRF740LCPBF-BE3MOSFET N-CH 400V 10A TO220AB Vishay Siliconix |
975 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | - | 550mOhm @ 6A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHP23N60E-BE3N-CHANNEL 600V Vishay Siliconix |
994 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±30V | 2418 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
