| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP17N80E-GE3MOSFET N-CH 800V 15A TO220AB Vishay Siliconix |
1,000 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHA150N60E-GE3E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix |
2,000 | - |
|
数据手册 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SIHA22N60AE-GE3N-CHANNEL 600V Vishay Siliconix |
979 | - |
|
数据手册 |
E | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
IRFIBF30GPBFMOSFET N-CH 900V 1.9A TO220-3 Vishay Siliconix |
888 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.9A (Tc) | 10V | 3.7Ohm @ 1.1A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SIHA155N60EF-GE3E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix |
1,842 | - |
|
数据手册 |
EF | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 89mOhm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 1465 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIHP150N60E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,985 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHP155N60EF-GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
1,995 | - |
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数据手册 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 1465 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHB17N80E-GE3MOSFET N-CH 800V 15A D2PAK Vishay Siliconix |
888 | - |
|
数据手册 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHB11N80E-GE3MOSFET N-CH 800V 12A D2PAK Vishay Siliconix |
4,800 | - |
|
数据手册 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHG22N60EF-GE3MOSFET N-CH 600V 19A TO247AC Vishay Siliconix |
793 | - |
|
数据手册 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 182mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1423 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |

