电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SIHK155N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 Vishay Siliconix |
4,000 | - |
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数据手册 |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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SIHH155N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
6,000 | - |
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数据手册 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1465 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIHH150N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix |
6,000 | - |
|
数据手册 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 155mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIHK155N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
4,000 | - |
|
数据手册 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 52mOhm @ 10A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 1465 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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IRFPE30PBFMOSFET N-CH 800V 4.1A TO247-3 Vishay Siliconix |
381 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHG33N60EF-GE3MOSFET N-CH 600V 33A TO247AC Vishay Siliconix |
498 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±30V | 3454 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SUM70042M-GE3N-CHANNEL 100 V (D-S) MOSFET D2P Vishay Siliconix |
780 | - |
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数据手册 |
TrenchFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 3.83mOhm @ 20A, 10V | 3.8V @ 250µA | 126 nC @ 10 V | ±20V | 6750 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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SIHB24N65E-GE3MOSFET N-CH 650V 24A D2PAK Vishay Siliconix |
1,868 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHP085N60EF-GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
1,995 | - |
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数据手册 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 84mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2733 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHF30N60E-GE3MOSFET N-CH 600V 29A TO220 Vishay Siliconix |
2,975 | - |
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数据手册 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
