电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHK075N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
1,926 | - |
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数据手册 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 71mOhm @ 15A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±30V | 2954 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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SIHF074N65E-GE3E SERIES POWER MOSFET TO-220 FUL Vishay Siliconix |
988 | - |
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数据手册 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIHP074N65E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,000 | - |
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数据手册 |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHG47N65E-GE3MOSFET N-CH 650V 47A TO247AC Vishay Siliconix |
486 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±30V | 5682 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHP054N65E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,037 | - |
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数据手册 |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 58mOhm @ 20A, 10V | 5V @ 250µA | 108 nC @ 20 V | ±30V | 3769 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHK055N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
2,040 | - |
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数据手册 |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3667 pF @ 100 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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MXP120A080FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
540 | - |
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数据手册 |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 18V, 20V | 100mOhm @ 20A, 20V | 2.69V @ 5mA | 47.3 nC @ 18 V | +22V, -10V | 1156 pF @ 800 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
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SIHG64N65E-GE3MOSFET N-CH 650V 64A TO247AC Vishay Siliconix |
481 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 32A, 10V | 4V @ 250µA | 369 nC @ 10 V | ±30V | 7497 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SI2301BDS-T1-BE3P-CHANNEL 2.5-V (G-S) MOSFET Vishay Siliconix |
3,800 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10 nC @ 4.5 V | ±8V | 375 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SI2301BDS-T1-E3MOSFET P-CH 20V 2.2A SOT23-3 Vishay Siliconix |
3,000 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10 nC @ 4.5 V | ±8V | 375 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
